Get 2D Nanoelectronics: Physics and Devices of Atomically Thin PDF

By Mircea Dragoman, Daniela Dragoman

ISBN-10: 3319484354

ISBN-13: 9783319484358

ISBN-10: 3319484370

ISBN-13: 9783319484372

This booklet is devoted to the recent two-dimensional one-atomic-layer-thick fabrics similar to graphene, metal chalcogenides, silicene and different second fabrics. The ebook describes their major actual houses and purposes in nanoelctronics, photonics, sensing and computing. a wide a part of the publication offers with graphene and its awesome actual homes. one other vital a part of the e-book bargains with semiconductor monolayers equivalent to MoS2 with outstanding purposes in photonics, and electronics. Silicene and germanene are the atom-thick opposite numbers of silicon and germanium with amazing functions in electronics and photonics that are nonetheless unexplored. attention of two-dimensional electron fuel units finish the remedy. The physics of 2DEG is defined intimately and the purposes in THz and IR zone are discussed.
Both authors are operating at present on those 2nd fabrics constructing concept and applications.

Show description

Read Online or Download 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials PDF

Best semiconductors books

Semiconductor Nanomaterials (Nanomaterials for Life Sciences by Challa S. S. R. Kumar PDF

Those ten volumes offer an exceptional, in-depth review of all nanomaterial forms and their makes use of within the existence sciences. each one quantity is devoted to a particular fabric type and covers basics, synthesis thoughts, structure-property relationships, fabric behaviour finetuning, organic results and purposes within the existence sciences.

Download e-book for iPad: Molecular Beam Epitaxy - Applications to Key Materials by Robin F. C. Farrow

During this quantity, the Editor and participants describe using molecular beam epitaxy (MBE) for a variety of key fabrics platforms that are of curiosity for either technological and basic purposes. past books on MBE have supplied an advent to the elemental suggestions and strategies of MBE and emphasize development and characterization of GaAs-based constructions.

Download e-book for iPad: High Voltage Devices and Circuits in Standard CMOS by Hussein Ballan

General voltages utilized in cutting-edge ICs may perhaps differ from approximately 1. 3V to greater than 100V, counting on the know-how and the appliance. excessive voltage is hence a relative proposal. excessive Voltage units and Circuits in ordinary CMOS applied sciences is principally enthusiastic about usual CMOS applied sciences, the place excessive voltage (HV) is outlined as any voltage larger than the nominal (low) voltage, i.

Additional info for 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials

Example text

29), where U ¼ ½jðS21 =S12 Þ À 1j2 =2Š=ðkU jS21 =S12 j À Re½S21 =S12 ŠÞ ð1:61Þ kU ¼ ð1 À jS11 j2 À jS22 j2 þ jS12 S22 À S21 S12 j2 Þ=ð2jS12 S22 jÞ; ð1:62Þ and Sij, i, j = 1, 2 being the scattering parameters. 28 suggests that the highest fmax is obtained for an optimal gate length, and not the smallest channel length. One of graphene FET configurations with the most impressive records is that containing an aligned T-gate on the C-face of the SiC substrate. This graphene FET configuration, schematically represented in Fig.

65 for various DC current Iav values: 1 mA (gray thin line), 2 mA (black line) and 3 mA (gray thick line). 5 GHz. 2 Nanoelectronics on 2D Carbon-Based Materials 53 Fig. 63 Current-voltage dependence of the coplanar line patterned over graphene monolayer (from Dragoman et al. 2012a, b) Bias tee 2 Current source (from Keithley 4200 SCS) AM microwave generator I + V Bias tee 1 CPW on graphene Amplifier (LNA) Fig. 64 A graphene monolayer direct radio (from Dragoman et al. 2012a, b) Fig. 65 Amplitudes of detected signal using the graphene radio (from Dragoman et al.

2010) In Fig. 35 we have represented with dashed line the mobility of a coplanar graphene FET as a function of the drain voltage, when the top gate voltage is zero. From this figure it follows that the peak mobility is of 9000 cm2/V s at a drain voltage of 3 V while at VD = 4 V there is a drop in mobility, which corresponds to the position of the Dirac point. 2 Nanoelectronics on 2D Carbon-Based Materials 33 Probe tips S Ground Ground D RF RF G Ground S Ground Fig. 34 Graphene FET in a coplanar configuration for RF measurement Fig.

Download PDF sample

2D Nanoelectronics: Physics and Devices of Atomically Thin Materials by Mircea Dragoman, Daniela Dragoman

by Mark

Rated 4.97 of 5 – based on 40 votes